IMD10AT108 دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت IMD10AT108	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Digital Transistors
Datasheet: ROHM Semicon IMD10AT108
Transistor Type: 1 NPN,1 PNP - Pre-Biased
Collector Current (Ic): 100mA;500mA
Power Dissipation (Pd): 300mW
Transition Frequency (fT): 250MHz;200MHz
DC Current Gain (hFE@Ic,Vce): 100@1mA,5V;68@100mA,5V
Collector Cut-Off Current (Icbo): 500nA
Collector-Emitter Breakdown Voltage (Vceo): 50V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@1mA,10mA;300mV@5mA,100mA
Package: SOT-23-6
Manufacturer: ROHM Semicon
Part id: 584450